Micron announced that it has sampled the industry's first HBM3 Gen2 memory

【Lansheng Technology Information】On July 26, Micron announced the launch of the industry's first 8-layer 24GB HBM3 Gen2 memory chip, which is the next-generation product of HBM3 and adopts the 1β process node. At present, this Micron memory chip is providing samples to customers.

Micron is the first manufacturer in the industry to manufacture the second-generation HBM3 memory. It is said that this memory is also the fastest memory chip in the world, with a total bandwidth of more than 1.2TB/s and a pin speed of more than 9.2Gb/s. HBM3 increased by 50%. At the same time, the performance per watt of this HBM3 Gen2 chip is about 2.5 times that of HBM3, and the energy efficiency has been greatly improved. In addition, this chip is packaged in 11mm×11mm, has 16 channels, and has high reliability. The product supports 2.5D, 3D, and CoWoS packages, and is suitable for applications such as AI chips and HPC processors.

Currently, TSMC has received samples of Micron's HBM3 Gen2 memory and is working closely with Micron for further evaluation and testing. According to the latest memory roadmap released by Micron, this 8-layer stacked HBM3 Gen2 memory has a capacity of 24GB. In the future, there will be a 12-layer stacked version with a capacity of 36GB. It is expected that samples will be produced by the first quarter of 2024, and by 2025. 36GB HBM Gen2 memory will be officially mass-produced. In addition, Micron will launch 36GB-64GB HBM products in 2026, and the bandwidth can be increased to 1.5~2TB/s.

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