ON Semiconductor's Next-Generation 1200 V EliteSiC M3S Devices Improve Energy Efficiency in Electric Vehicle and Energy Infrastructure
【Lansheng Technology Information】On May 10, 2023, ON Semiconductor launched the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, helping power electronics engineers achieve better energy efficiency and lower system costs. New product family includes EliteSiC MOSFETs and modules that help improve switching speeds to accommodate the growing number of 800 V electric vehicle (EV) on-board chargers (OBC) and EV DC fast charging, solar solutions, energy storage and more Energy infrastructure applications.
The portfolio also includes new EliteSiC M3S devices featuring half-bridge Power Integrated Modules (PIMs) with industry-leading ultra-low Rds(on) in standard F2 packages. These modules are ideal for DC-AC, AC-DC and DC-DC high power conversion stages in industrial applications. They offer higher levels of integration with an optimized direct-bond copper design for balanced current sharing and thermal distribution between paralleled switches. These PIMs are designed to provide high power density and are suitable for energy infrastructure, DC fast charging of electric vehicles and uninterruptible power supplies (UPS).
"ON Semiconductor's latest generation of automotive and industrial EliteSiC M3S products will help designers reduce their application footprint and lower system thermal requirements," said Asif Jakwani, senior vice president and general manager of the Advanced Power Division at ON Semiconductor. This helps designers develop High-power converters with higher energy efficiency and higher power density."
Automotive-grade 1200 V EliteSiC MOSFETs are designed for high-power OBCs up to 22 kW and high-voltage to low-voltage DC-DC converters. M3S technology is specially developed for high-speed switching applications and has a switching loss figure of merit that leads similar products.
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