Power semiconductors enter the SiC era
Different from the overall "downturn" status quo of the semiconductor market, the power semiconductor market is extremely lively. Power semiconductors are moving from traditional silicon-based power devices IGBT and MOSFET to the era represented by SiC and GaN.
With the rapid development of 5G, Internet of Things, new energy and other industries, silicon carbide and gallium nitride, which have wider bandgap, higher breakdown electric field, thermal conductivity, electron saturation rate and radiation resistance, are the most important The third-generation semiconductor materials represented by the company have entered a stage of rapid development, and the market prospect is broad.
According to TrendForce's "2023 SiC Power Semiconductor Market Analysis Report", as Infineon, ON Semi and other cooperation projects with automobile and energy companies become clear, the overall SiC power device market size is expected to increase to US$2.28 billion in 2023, with an annual growth rate of was 41.4%. At the same time, benefiting from the strong demand in major downstream application markets such as electric vehicles and renewable energy, the market size of SiC power components is expected to reach US$5.33 billion in 2026. According to Yole data, it is estimated that by 2023, the global penetration rate of silicon carbide materials is expected to reach 3.75%.
Automotive semiconductor chip giant Renesas Electronics recently announced that it will start using SiC in 2025 to produce next-generation power semiconductor products with reduced losses. The amount and scale of production have yet to be determined.
#Renesas President and CEO Shibata Hidetoshi said, "We started very slowly in power semiconductors. Customers have very high evaluations of Renesas IGBTs and will apply these evaluations to the SiC business. The SiC market is still small now, but there will be no in the future. It will undoubtedly become very large.”
ON Semiconductor executives said the company is considering expansion in the U.S., the Czech Republic or South Korea, aiming to capture 40 percent of the silicon carbide automotive chip market by 2027.
In Germany, industrial giant Bosch recently plans to expand its SiC product portfolio by the end of 2030 through the acquisition of US chipmaker TSI Semiconductor.
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