ROHM begins mass production of 650V withstand voltage GaNHEMT with industry's highest performance

According to Lansheng Technology, ROHM, a world-renowned semiconductor manufacturer, has mass-produced 650V withstand voltage GaN (Gallium Nitride: Gallium Nitride) HEMT*1 "GNP1070TC-Z" and "GNP1150TCA-Z". These two products are very suitable for various power supply systems such as servers and AC adapters

The new product is jointly developed by ROHM and Ancora Semiconductors Inc., a subsidiary of Delta Electronics, Inc., which focuses on the development of GaN components. The device performance index (RDS(ON)×Ciss / RDS( ON)×Coss*2), it has reached the highest level in the industry. Therefore, the new product can greatly reduce the switching loss, which can further improve the efficiency of the power system. In addition, the new product also has a built-in ESD*3 protection device, which improves the antistatic ability to 3.5kV, which will help improve the reliability of the applied product. Not only that, the new product also has the advantages of GaN HEMT devices - high-speed switching operation, which contributes to the miniaturization of peripheral components.

ROHM has named GaN devices that contribute to energy saving and miniaturization of applied products the "EcoGaN™ Series" and is continuously working to further improve device performance. In addition, in addition to the development of components, ROHM also actively establishes strategic partnerships with relevant companies in the industry and promotes joint development, and continues to contribute to solving social problems by helping the efficiency and miniaturization of application products.

EcoGaN™ is a ROHM GaN device that helps application products to further save energy and miniaturize by maximizing the performance of GaN. This series of products helps application products further reduce power consumption, realize miniaturization of peripheral components, and reduce design man-hours and the number of components, etc.

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