STMicroelectronics mass-produces PowerGaN devices, making power products smaller, cooler, and more energy-efficient
【Lansheng Technology Information】August 3, 2023, China - STMicroelectronics announced that it has begun mass production of enhancement-mode PowerGaN HEMT devices that simplify the design of high-efficiency power conversion systems. STPOWER™ GaN transistors improve the performance of applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy generation, vehicle electrification, and more.
The first two products of this series, SGT120R65AL and SGT65R65AL, are industrial-grade 650V normally-off G-HEMT™ transistors, which are packaged in PowerFLAT 5x6 HV. The rated currents are 15A and 25A respectively, and the typical on-resistance at 25°C (RDS(on)) are 75mΩ and 49mΩ, respectively. Additionally, total gate charge of 3nC and 5.4nC and low parasitic capacitance ensure the transistor has minimal turn-on/turn-off energy losses. A Kelvin source pin allows for optimized gate drive. In addition to reducing the size and weight of power supplies and adapters, the two new GaN transistors enable higher energy efficiency, cooler operating temperatures and longer lifetimes.
In the coming months, STMicroelectronics will launch new PowerGaN products, automotive-grade devices, and more power packages, including PowerFLAT 8x8 DSC and LFPAK 12x12 high-power packages.
STMicroelectronics' G-HEMT devices will accelerate the transition of power conversion systems to GaN wide bandgap technology. The breakdown voltage and on-resistance RDS(on) of GaN transistors are the same as silicon-based transistors, while the total gate charge and parasitic capacitance are lower, and there is no reverse recovery charge. These features improve the energy efficiency and switching performance of the transistor, enabling higher switching frequencies and higher power density with smaller passive components. As a result, application devices can become smaller and have higher performance. In the future, GaN is also expected to enable new power conversion topologies to further improve energy efficiency and reduce power consumption.
STMicroelectronics has sufficient production capacity of PowerGaN discrete devices to support customers' rapid mass production needs. The SGT120R65AL and SGT65R65AL are available now in a PowerFLAT 5x6 HV package.
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