Texas Instruments Introduces Silicon Carbide Gate Drivers to Maximize Electric Vehicle Range

【Lansheng Technology Information】Texas Instruments Introduces a Highly Integrated Functional Safety Compliant Isolated Gate Driver to Help Engineers Design More Efficient Traction Inverters and Maximize Electric Vehicle (EV) Driving Range . The new UCC5880-Q1 reinforced isolated gate driver provides features that enable electric vehicle powertrain engineers to achieve their safety and performance goals while increasing power density and reducing system design complexity and cost.

As electric vehicles become increasingly popular, semiconductor innovations in traction inverter systems can help overcome some of the key technical barriers preventing their widespread adoption. Automakers can use the UCC5880-Q1 to design and build safer, more efficient and more reliable silicon carbide (SiC) and insulated gate bipolar transistor (IGBT) traction inverters with real-time variable gate drive capabilities, serial peripheral interface (SPI), power module monitoring and protection, and functional safety diagnostics.

"Designers of high-voltage applications such as traction inverters face a unique set of challenges in delivering higher system efficiency and reliability in tight spaces," said Wenjia Liu, product line manager for high-voltage drives at Texas Instruments. The isolated gate driver not only helps engineers maximize driving range, but also reduces external component count and design complexity by integrating safety features.It can also be easily paired with other high-voltage power conversion products for This will help increase system power density and help engineers get the most out of traction inverters."

Texas Instruments is committed to helping engineers fully unlock the power of high-voltage technologies through innovations in power conversion and wide bandgap technologies.

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