The demand in the new energy market is hot, and semiconductor giants gather in GaN

Recently, Europe has established a gallium nitride scientific research project of up to 60 million euros, aiming to establish a complete supply capacity from power chips to modules.

In addition to Infineon, another 45 of its partners are involved. There is no doubt that this large-scale and high-investment GaN project highlights Infineon's determination to increase the layout for three and a half generations. To some extent, this will also be an important step for Europe to increase its chip manufacturing share and create a resilient supply chain.

In February last year, Infineon announced that it would spend more than 2 billion euros to build a third plant in Kulim, Malaysia, to produce SiC and GaN power semiconductors. At the same time, it said that in the future, the Si production line at the Villach plant in Austria will be transformed and converted to SiC and GaN production capacity.

Earlier, #Infineon announced that it had signed a final agreement with GaN Systems to acquire the latter for $830 million. The slightly aggressive expansion and the continuous advancement of the GaN technology roadmap all prove that Infineon is coveting this "cake".

In the ranking of the world's top ten power semiconductor manufacturers in 2021, Infineon ranked first with its absolute revenue advantage, followed by ON Semiconductor, STMicroelectronics, #Mitsubishi Electric, #Fuji Electric, Toshiba, Vishay, and #Anshi Semiconductors, Renesas Electronics, and Rohm. Almost every company here is accelerating the deployment of GaN.

From the perspective of the application of the third-generation half-power devices, consumer product power supplies, industrial and commercial power supplies, and new energy vehicles are the main markets. Especially as the penetration rate of new energy vehicles continues to increase, the requirements for energy saving and charging efficiency are getting higher and higher, and the potential of three and a half generations is becoming more and more prominent.

GaN power devices are mainly used in fields such as on-board chargers and DC-DC converters. Compared with Si, GaN can increase the charging speed by at least three times; compared with SiC, it also has advantages in high temperature resistance, high frequency resistance and high voltage resistance.

However, currently limited by the wafer preparation process and cost factors, the output of GaN is far less than that of SiC, and the application speed is slightly behind.

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