Toshiba's 100V N-channel power MOSFET contributes to the miniaturization of power supply circuits

【Lansheng Technology Information】Toshiba today announced the launch of the 100V N-channel power MOSFET "TPH3R10AQM" manufactured using Toshiba's latest generation U-MOS X-H process. The new products are suitable for applications such as switching circuits and hot-swap circuits[1] on power lines of industrial equipment used in data centers and communication base stations. The product supports volume shipments starting today.

The TPH3R10AQM has an industry-leading[2] 3.xn--1m-fcc maximum drain-source on-resistance, which is 16% lower than Toshiba's current 100V product "TPH3R70APL"[2]. By the same comparison, TPH3R10AQM expands the safe operating area by 76% [3], making it suitable for linear mode work. Also, reducing the on-resistance and extending the linear operating range of the safe operating area can reduce the number of parallel connections. In addition, its gate threshold voltage ranges from 2.5V to 3.5V, making it less prone to failure due to gate voltage noise.

In the future, Toshiba will continue to expand its lineup of power MOSFETs to improve power efficiency by reducing losses and help reduce power consumption in devices.

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