Toshiba Develops Industry's First 2200V Dual SiC MOSFET Module, Contributing to High Efficiency and Miniaturization of Industrial Equipment

【Lansheng Technology Information】Toshiba Electronics announced on August 29 that it launched the industry's first [1] 2200V dual silicon carbide MOSFET module --- "MG250YD2YMS3". The new module uses Toshiba's third-generation SiC MOSFET chip, and its drain current (DC) rating is 250A, which is suitable for applications using DC 1500V such as photovoltaic power generation systems and energy storage systems. The product supports volume shipments starting today.

Industrial applications like the above usually use DC 1000V or lower power, and most of its power devices are 1200V or 1700V products. However, DC 1500V is expected to be widely used in the next few years, so Toshiba released the industry's first 2200V product.

MG250YD2YMS3 has low conduction loss and low drain-source turn-on voltage (sensor) of 0.7V (typ.) [2]. In addition, it has low turn-on and turn-off losses of 14mJ (typ.) [3] and 11mJ (typ.) [3], respectively, about 90% lower than typical silicon (Si) IGBTs[ 4]. These features all help to improve equipment efficiency. Since MG250YD2YMS3 can achieve lower switching loss, users can replace traditional three-level circuits with two-level circuits with fewer modules, which contributes to the miniaturization of equipment.

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